hiperdynfred tm epitaxial diode isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified see dsec 29-06a for electrical characteristic curves d pulse test: pulse width = 5 ms, duty cycle < 2.0 % e pulse test: pulse width = 300 s, duty cycle < 2.0 % ixys reserves the right to change limits, test conditions and dimensions. features l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l low cathode to tab capacitance (<15pf) l planar passivated chips l very short recovery time l extremely low switching losses l low i rm -values l soft recovery behaviour l epoxy meets ul 94v-0 applications l antiparallel diode for high frequency switching devices l antisaturation diode l snubber diode l free wheeling diode in converters and motor control circuits l rectifiers in switch mode power supplies (smps) l inductive heating l uninterruptible power supplies (ups) l ultrasonic cleaners and welders advantages l avalanche voltage rated for reliable operation l soft reverse recovery for low emi/rfi l low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch i fav = 2x15 a v rrm = 600 v t rr = 35 ns v rsm v rrm type v v 600 600 dsea29-06ac 600 600 dsec 29-06ac preliminary data sheet ? 2000 ixys all rights reserved dsea 29-06ac dsec 29-06ac 3 2 isolated back surface * 1 3 1 2 symbol conditions maximum ratings i frms 35 a i favm t c = 140c; rectangular, d = 0.5 15 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 110 a e as t vj = 25c; non-repetitive 0.1 mj i as = 0.9 a; l = 180 h i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.1 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 95 w v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force with clip 11...65 / 2.5...15 n / lb weight typical 3 g symbol conditions characteristic values typ. max. i r c t vj = 25c v r = v rrm 100 a t vj = 150c v r = v rrm 0.5 ma v f d i f = 15 a; t vj = 150c 1.34 v t vj = 25c 2.03 v r thjc 1.6 k/w r thch 0.6 k/w t rr i f = 1 a; -di/dt = 50 a/s; 35 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 25 a; -di f /dt = 100 a/s 4 4.9 a t vj = 100c 3 1 2 dsea dsec 98829 (5/05) isoplus220 tm e153432
isoplus220 outline note: all terminals are solder plated. dsea: 1 - cathode 2 - anode 3 - cathode dsec: 1 -anode 2 - cathode 3 - anode dsea 29-06ac dsec 29-06ac
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